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| www..com AP70T03GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant G S BVDSS RDS(ON) ID 30V 9m 60A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 60 43 195 53 0.36 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W Data and specifications subject to change without notice 200823053-1/4 www..com AP70T0G3H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 35 17 5 10 13.5 8 105 22 9 245 170 Max. Units 9 18 3 1 250 100 27 22 V V/ m m V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) o o VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 20V ID=33A VDS=20V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=33A RG=3.3,VGS=10V RD=0.45 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1485 2400 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=33A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 27 20 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 www..com AP70T03GH/J 120 200 T C =25 C ID , Drain Current (A) 150 o 10V 8.0V 90 T C =175 o C ID , Drain Current (A) 10V 8.0V 6.0V 6.0V 100 60 50 V G =4.0V 30 V G =4.0V 0 0.0 1.5 3.0 4.5 0 0.0 1.5 3.0 4.5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 2 I D =20A T C =25 1.6 40 I D =33A V G =10V Normalized RDS(ON) RDS(ON) (m ) 1.2 20 0.8 0 0 4 8 12 16 0.4 -50 25 100 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 1000 100 2 IS(A) 10 T j =175 o C T j =25 o C VGS(th) (V) 1.5 1 1 0.1 0.5 0 0.5 1 1.5 -50 25 100 175 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 www..com AP70T03GH/J 12 10000 f=1.0MHz I D =33A VGS , Gate to Source Voltage (V) 9 C (pF) V DS =16V V DS =20V V DS =24V C iss 1000 6 3 C oss C rss 0 0 5 10 15 20 25 30 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 10us 100 0.2 ID (A) 100us 0.1 0.1 0.05 0.02 0.01 Single Pulse 10 1ms T C =25 C Single Pulse o PDM t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 10ms 100ms DC 10 100 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) t f Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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